Combination-Encoding Content-Addressable Memory With High Content Density

Combination-Encoding Content-Addressable Memory With High Content Density

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Recently, resistance switch-based content-addressable memory (RCAM) has been proposed as an alternative to the ultrastar dc hc550 mainstream static random-access memory-based CAM because of its high integration potential and low static energy consumption.However, RCAM has a lower data density due to the use of a pair of resistance switches for a single bit of contents (0.5 bit/switch) than resistive random access memory (1 bit/switch).In this paper, we propose a new type of RCAM referred to as combination-encoding CAM (CECAM).

In the N-CECAM, a single unit consists of sukin body lotion woolworths N high and N low resistance state switches whose combination collectively represents binary contents, yielding a data density of approximately 0.85 bit/switch when N = 10, for instance.The key to the CECAM is the encoding of an n-bit search key as a 2N-digit key and its decoding.To this end, we propose a simple algorithm for encoding and decoding and its implementation in digital circuitry.